 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| H5N3004P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1523 (Z) Rev.0 Apr. 2002 Features * Low on-resistance * Low leakage current * High speed switching * Low gate charge (Qg) * Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3004P Absolute Maximum Ratings (Ta=25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAPNote Pch 3 Note1 Note1 Ratings 300 30 25 100 25 100 25 150 0.833 150 -55 to +150 Unit V V A A A A A W C/W C C Note2 ch-c Tch Tstg Rev.0, Apr. 2002, page 2 of 2 H5N3004P Electrical Characteristics (Ta=25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol Min V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr 300 -- -- 3.0 15 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ * * * * 25 0.076 3600 400 100 50 120 180 90 110 18 55 0.9 250 2.3 Max -- 1 0.1 4.0 -- 0. 093 * * * * -- * -- -- -- -- 1.35 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions ID = 10 mA, VGS = 0 VDS = 300 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 12.5 A, VDS = 10 VNote ID = 12.5 A, VGS= 10 VNote VDS = 25 V VGS = 0 f = 1 MHz ID= 12.5 A RL = 12 VGS = 10 V Rg = 10 VDD = 240 V VGS = 10 V ID = 25 A IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 diF/dt = 100 A/s 4 4 Rev.0, Apr. 2002, page 3 of 3 H5N3004P Main Characteristics Power vs. Temperature Derating 200 Channel Dissipation Pch (W) 1000 300 Drain Current ID (A) Maximum Safe Operation Area 150 100 30 10 3 DC Op PW er at 1m = 10 (T 10 s 10 0 s s 100 m ion s( 1s ho ) 50 0.3 0.1 0 50 100 150 200 Operation in 1 this area is limited by RDS(on) c= t) 25 C Ta = 25C 1 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Case Temperature Tc (C) Typical Output Characteristics 100 Pulse Test 80 Drain Current ID (A) Typical Transfer Characteristics 100 V DS = 10 V Pulse Test 80 10 V 8V 6.5 V Drain Current ID (A) 7V 60 60 6V 40 5.5 V VGS = 5 V 0 4 8 12 16 20 Drain to Source Voltage VDS (V) 40 Tc = 75C 20 25C -25C 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 20 Rev.0, Apr. 2002, page 4 of 4 H5N3004P Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Drain to Source on State Resistance RDS(on) (m) 5 4 Static Drain to Source on State Resistance vs. Drain Current 200 Pulse Test VGS = 10 V, 15 V 100 3 I D = 25 A 15 A 1 5A 0 12 4 8 Gate to Source Voltage 16 VGS (V) 20 50 2 20 10 1 2 5 10 20 50 Drain Current ID (A) 100 Drain to source on State Resistance RDS(on) (m) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 200 Pulse Test I D = 25 A V GS = 10 V 160 15 A 120 5A 80 Forward Transfer Admittance vs. Drain Current 100 50 20 10 5 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V Pulse Test 10 20 50 100 Drain Current ID (A) 75C 25C Tc = -25C 40 0 -40 0 40 80 120 160 Case Temperature Tc (C) Rev.0, Apr. 2002, page 5 of 5 H5N3004P Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Capacitance C (pF) 50000 20000 10000 5000 2000 1000 500 200 100 50 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 500 200 100 50 Ciss Coss Crss 0 25 50 75 100 125 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) 500 I D = 25 A 400 V DD = 50 V 100 V 240 V VDS VGS 20 VGS (V) 10000 Switching Characteristics V GS = 10 V, VDD = 150 V PW = 10 s, duty < 1 % R G =10 (ns) 16 Drain to Source Voltage Gate to Source Voltage 1000 Switching Time t 300 12 tr t d(off) 100 tf tf t d(on) 200 8 100 V DD = 240 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) 4 0 200 tr 10 0.1 0.3 1 3 Drain Current 10 ID 0 30 (A) 100 Rev.0, Apr. 2002, page 6 of 6 H5N3004P Reverse Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) 100 5 (A) V DS = 10 V I D = 10 mA 1 mA 0.1 mA Reverse Drain Current IDR 80 V GS = 0 V 4 60 3 40 10 V Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage 2 20 5V 1 0 -50 0 50 100 150 Case Temperature Tc (C) 200 Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 150 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.0, Apr. 2002, page 7 of 7 H5N3004P Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 Normalized Transient Thermal Impedance s (t) 0.1 Gch 0.1 0.05 Gch - c(t) = Cs (t) * Gch - c - c = 0.833C/W, Tc = 25C D= PW T PDM 0.03 0.02 1 0.0 PW T 0.01 10 1s h p ot uls e 100 1m 10 m Pulse Width PW (S) 100 m 1 10 Rev.0, Apr. 2002, page 8 of 8 H5N3004P Package Dimensions As of July, 2001 5.0 0.3 15.6 0.3 4.8 0.2 1.5 Unit: mm 0.5 1.0 3.2 0.2 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 0.2 18.0 0.5 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC JEITA Mass (reference value) TO-3P -- Conforms 5.0 g 0.3 Rev.0, Apr. 2002, page 9 of 9 H5N3004P Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Apr. 2002, page 10 of 10 |
Price & Availability of H5N3004P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |